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InGaN/GaN light emitting diode with quasi-aligned gold nanoparticles

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped gallium nitride

n-doped GaN
Type
Formula
Role
2

indium gallium nitride/gallium nitride multiple quantum wells

InGaN/GaN multiple quantum wells InGaN multiple quantum wells InGaN/GaN MQW InGaN MQW
Type Nano Material
Formula
Role active layer
3

p-doped gallium nitride

p-doped GaN
Type Complex Compound
Formula
Role p-contact layer
4

gold/nickel/gold nanoparticles trilayer

Au/Ni/GNP trilayer TLC
Type Nano Material
Formula
Role transparent conducting layer
5

nickel/gold bilayer

Ni/Au bilayer
Type Nano Material
Formula
Role p-type electrode
6

nickel/gold bilayer

Ni/Au bilayer
Type Nano Material
Formula
Role n-type electrode

Properties

General physical and chemical properties

Property Value Source
optical output voltage-current characteristics

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Applications

Area Application Source
lighting devices

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

References

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