Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

S-doped graphene based bottom-gate field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

double-layer graphene systems

double-layer graphene sheets multi-layer graphene sheets multilayer graphene sheets bilayer graphene supercell double-layered graphene bilayer graphene film double-layer graphene double layer graphene multi-layer graphene two-layered graphene multilayer graphene bi-layered graphene few-layer graphene bilayered graphene bi-layer graphene graphene bilayers bilayer graphene graphene bilayer 2-layer graphene graphene flakes graphene sheets 2L graphene BL graphene bilayer GF graphene BLG film 2L Gr BLG DLG 2LG GF BG
Type
Formula
Role
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

More information available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

S-doped graphene based bottom-gate field-effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial