Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

S-doped graphene based bottom-gate field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

double-layer graphene systems

double-layer graphene sheets multi-layer graphene sheets bilayer graphene supercell multilayer graphene sheets double-layered graphene bilayer graphene film double layer graphene double-layer graphene multi-layer graphene two-layered graphene multilayer graphene bi-layered graphene few-layer graphene bilayered graphene bi-layer graphene graphene bilayers bilayer graphene graphene bilayer 2-layer graphene graphene sheets graphene flakes 2L graphene BL graphene bilayer GF graphene BLG film 2L Gr 2LG BLG DLG GF BG
Type
Formula
Role
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

0 more entry available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

S-doped graphene based bottom-gate field-effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial