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QD-LED device

Based on

1 Articles
2014 Most recent source

Composition

1

N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine

N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,10-biphenyl-4,4'-diamine N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,10-biphenyl-4,4'-diamine N,N'-bis (3-methylphenyl)-N,N'-bis-(phenyl)-benzidine N,N';- bis(4-butylphenyl)-N,N';-bis(phenyl)benzidine N,N';-bis (3-methylphenyl)-N,N';-diphenylbenzidine N,N'-bis (3-methylphenyl)-N,N'-diphenylbenzidine N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine N,N'-diphenyl-N,N'-di(m-tolyl)-4-benzidine α-NPD TPD
Type Single Compound
Formula C38H32N2
Role hole transport layer
2

CdSeS quantum dots

CdSeS QD
Type Nano Material
Formula
Role emission layer
3

cadmium selenide sulfide

CdSeS
Type Single Compound
Formula CdSSe
Role electron transport layer
4

silver

Type Single Compound
Formula Ag
Role cathode
5

tin-doped indium oxide

indium tin oxide ITO
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
CIE chromaticity coordinate

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence dependent on bias voltage

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tin-doped indium oxide
  • N,N'-bis(3-methyl phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine
  1. 5BX4HInTwU
Product

QD-LED device

References

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