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InGaN/GaN multiquantum well light emitting diode on carbon nanotube-patterned sapphire substrate

Based on

1 Articles
2012 Most recent source

Composition

1

α-aluminium(III) oxide

α-aluminium oxide α-aluminum oxide alpha-alumina α-alumina corundum α-Al2O3
Type
Formula Al2O3
Role
2

superaligned multi-walled carbon nanotube film

aligned MWCNT film
Type
Formula
Role
3

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type
Formula GaN
Role
4

n-type gallium nitride

Type
Formula
Role
5

InGaN/GaN multiquantum well

InGaN/GaN MQW
Type
Formula
Role
6

p-type GaN film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
critical saturation current

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Applications

Area Application Source
optoelectronics

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Characterization

Biological effects

Preparation

References

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