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thermal oxide passivated silicon nanowire field-effect transistor

Based on

1 Articles
2012 Most recent source

Composition

1

p++ silicon

Type
Formula
Role
2

200 nm thick silicon nitride layer

200 nm thick Si3N4 layer silicon nitride layer Si3N4 layer
Type
Formula
Role
3

thermal oxide passivated silicon nanowires

thermal oxide passivated Si NW
Type
Formula
Role
4

nickel layer

Type
Formula
Role
5

120 nm thick alumnium layer

aluminium layer Al layer Al film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
drain-source current dependent on hysteresis

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. 0k7mI058S24cqGFfwIJnxxfUyoeM
Product

thermal oxide passivated silicon nanowire field-effect transistor

References

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