Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

nanodevice based on (InGaN/InAlGaN multiple quantum well/InGaN/InAlGaN multiple quantum well/Si-doped Al0.02Ga0.98N/Si-doped Al0.02Ga0.98N/tin-doped indium oxide/tin-doped indium oxide/Mg-doped Al0.1Ga0.9N/Mg-doped Al0.1Ga0.9N/Mg-doped Al0.3Ga0.7N/Mg-doped Al0.3Ga0.7N/aluminium nitride/aluminium nitride/Mg-doped InGaN/Mg-doped InGaN/Si-doped AlGaN/Si-doped AlGaN/Mg-doped GaN/Mg-doped GaN/doped GaN/doped GaN/sapphire/sapphire/silicon/silicon)

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role ohmic contact layer
3

Si-doped AlGaN

Type
Formula
Role
4

Mg-doped InGaN

Type Complex Compound
Formula
Role contacting layer
5

Mg-doped GaN

Type Complex Compound
Formula
Role capping layer
6

Mg-doped Al0.1Ga0.9N

Type Complex Compound
Formula
Role hole transport layer
7

Mg-doped Al0.3Ga0.7N

Type Complex Compound
Formula
Role hole transport layer
8

InGaN/InAlGaN multiple quantum well

InGaN/InAlGaN MQW
Type
Formula
Role
9

Si-doped Al0.02Ga0.98N

Type
Formula
Role
10

doped GaN

Type Complex Compound
Formula
Role epitaxial layer
11

gallium nitride

Type Single Compound
Formula GaN
Role nucleation layer
12

sapphire

Type
Formula Al2O3
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electroluminescence

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
lighting devices

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
electroluminescence

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • sapphire
Product

nanodevice based on (InGaN/InAlGaN multiple quantum well/InGaN/InAlGaN multiple quantum well/Si-doped Al0.02Ga0.98N/Si-doped Al0.02Ga0.98N/tin-doped indium oxide/tin-doped indium oxide/Mg-doped Al0.1Ga0.9N/Mg-doped Al0.1Ga0.9N/Mg-doped Al0.3Ga0.7N/Mg-doped Al0.3Ga0.7N/aluminium nitride/aluminium nitride/Mg-doped InGaN/Mg-doped InGaN/Si-doped AlGaN/Si-doped AlGaN/Mg-doped GaN/Mg-doped GaN/doped GaN/doped GaN/sapphire/sapphire/silicon/silicon)

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • sapphire
Product

nanodevice based on (InGaN/InAlGaN multiple quantum well/InGaN/InAlGaN multiple quantum well/Si-doped Al0.02Ga0.98N/Si-doped Al0.02Ga0.98N/tin-doped indium oxide/tin-doped indium oxide/Mg-doped Al0.1Ga0.9N/Mg-doped Al0.1Ga0.9N/Mg-doped Al0.3Ga0.7N/Mg-doped Al0.3Ga0.7N/aluminium nitride/aluminium nitride/Mg-doped InGaN/Mg-doped InGaN/Si-doped AlGaN/Si-doped AlGaN/Mg-doped GaN/Mg-doped GaN/doped GaN/doped GaN/sapphire/sapphire/silicon/silicon)

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial