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self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon-doped gallium nitride

Si-doped GaN
Type
Formula
Role
3

aluminium gallium nitride

AlGaN
Type
Formula
Role
4

silicon-doped gallium nitride

Si-doped GaN
Type Complex Compound
Formula
Role gate contact layer
5

titanium/aluminium/titanium/gold multilayer

Ti/Al/Ti/Au multilayer
Type Nano Material
Formula
Role source
6

titanium/aluminium/titanium/gold multilayer

Ti/Al/Ti/Au multilayer
Type Nano Material
Formula
Role drain
7

titanium nitride/tungsten/gold multilayer

T-shaped TiN/W/Au multilayer
Type Nano Material
Formula
Role Schottky gate
8

titanium/aluminium/titanium/gold multilayer

Ti/Al/Ti/Au multilayer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
drain current density

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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