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InAlAs/InGaAs double-gate high electron mobility transistor

Based on

1 Articles
2013 Most recent source

Composition

1

indium aluminium arsenide

indium gallium arsenide InGaAs
Type Single Compound
Formula In0.53Ga0.47As
Role channels
2

aluminium indium arsenide

indium aluminium arsenide indium aluminum arsenide
Type Single Compound
Formula Al0.48In0.52As
Role donor
3

aluminium indium arsenide

indium aluminium arsenide indium aluminum arsenide
Type Single Compound
Formula Al0.48In0.52As
Role spacer
4

aluminium indium arsenide

indium aluminium arsenide indium aluminum arsenide
Type Single Compound
Formula Al0.48In0.52As
Role Schottky
5

gallium indium arsenide

gallium indium arsenide InGaAs GaInAs
Type Single Compound
Formula InGaAs
Role cap

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cut-off frequency

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

References

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