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conventional AlGaN/GaN high-electron-mobility transistor

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role nucleation layer
3

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
4

p-Al0.2Ga0.8N

Type Complex Compound
Formula
Role hole transport layer
5

gallium nitride

Type Single Compound
Formula GaN
Role channel layer
6

aluminium gallium nitride

aluminum gallium nitride Al0.2Ga0.8N AlGaN
Type Single Compound
Formula Al0.2Ga0.8N
Role barrier layer

Properties

General physical and chemical properties

Property Value Source
2D electron gas density

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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