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Ge/Yb2O3/ZrTiO4/TaN MOS capacitor

Based on

1 Articles
2013 Most recent source

Composition

1

germanium

Type Single Compound
Formula Ge
Role substrate
2

ytterbium(III) oxide

ytterbium trioxide ytterbium oxide ytterbia
Type
Formula O3Yb2
Role
3

zirconium titanate

Type
Formula ZrTiO4
Role
4

tantalum(III) nitride

tantalum nitride
Type Single Compound
Formula NTa
Role gate electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ytterbium(III) oxide
  • germanium
Product

Ge/Yb2O3/ZrTiO4/TaN MOS capacitor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ytterbium(III) oxide
  • germanium
Product

Ge/Yb2O3/ZrTiO4/TaN MOS capacitor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • ytterbium(III) oxide
  • germanium
Product

Ge/Yb2O3/ZrTiO4/TaN MOS capacitor

Size: not specified

Medium/Support: none

References

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