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In0.17Al0.83N/AlN/GaN heterostructure field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

c-plane sapphire

sapphire
Type Single Compound
Formula Al2O3
Role substrate
2

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role buffer layer
3

gallium nitride

Type
Formula GaN
Role
4

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role spacer
5

indium aluminum nitride

Type
Formula In0.17Al0.83N
Role
6

Ti/Al/Ni/Au

Type Complex Compound
Formula
Role source
7

Ni/Au

Type Complex Compound
Formula
Role gate
8

Ti/Al/Ni/Au

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
2D electron gas density

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Applications

Area Application Source
electronics

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Characterization

Method Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • c-plane sapphire
Product

In0.17Al0.83N/AlN/GaN heterostructure field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • c-plane sapphire
Product

In0.17Al0.83N/AlN/GaN heterostructure field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • c-plane sapphire
Product

In0.17Al0.83N/AlN/GaN heterostructure field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • c-plane sapphire
Product

In0.17Al0.83N/AlN/GaN heterostructure field-effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • c-plane sapphire
Product

In0.17Al0.83N/AlN/GaN heterostructure field-effect transistor

References

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