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MOS device

Based on

1 Articles
2013 Most recent source

Composition

1

boron-doped silicon

p-type Si
Type Complex Compound
Formula
Role substrate
2

TiO2 thin film

TiO2 TF
Type Nano Material
Formula
Role layer
3

TiO2 nanowires

TiO2 NW
Type Nano Material
Formula
Role dielectric layer
4

silver

Type Single Compound
Formula Ag
Role Schottky gate

Properties

General physical and chemical properties

Property Value Source
barrier height

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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