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CeOx-based resistive random access memory device

Based on

1 Articles
2014 Most recent source

Composition

1

p-type Si

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role insulating layer
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

platinum

Type Single Compound
Formula Pt
Role bottom electrode
5

non-stoichiometric cerium oxide film

non-stoichiometric ceria film CeOx film
Type Nano Material
Formula
Role switching layer
6

substoichiometric zirconium oxide

zirconium oxide zirconia ZrOx
Type Single Compound
Formula ZrO(x)
Role interface layer
7

zirconium

Type Single Compound
Formula Zr
Role top electrode
8

tungsten

Type Single Compound
Formula W
Role capping layer

Properties

General physical and chemical properties

Property Value Source
cumulative probability

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Applications

Area Application Source
data storage

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Characterization

Method Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-type Si
  • oxygen
Product

CeOx-based resistive random access memory device

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-type Si
  • oxygen
Product

CeOx-based resistive random access memory device

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • p-type Si
  • oxygen
Product

CeOx-based resistive random access memory device

References

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