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graphene-boron nitride hexagonal-stacked heterobilayer channel-based tunnel field effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

gate

Type Complex Compound
Formula
Role gate
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role dielectric layer
3

graphene-boron nitride Bernal-stacked heterobilayer

G-BN HBL
Type Nano Material
Formula
Role channels
4

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role dielectric layer
5

gate

Type Complex Compound
Formula
Role gate
6

source

Type Complex Compound
Formula
Role source
7

drain

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on distance between layers

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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