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InGaN light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type
Formula GaN
Role
3

n-doped gallium nitride

n-GaN
Type
Formula
Role
4

InGaN QW

Type Nano Material
Formula
Role active layer
5

p-doped aluminium gallim nitride

p-AlGaN
Type
Formula
Role
6

aluminium gallium nitride

Type Single Compound
Formula Al0.12Ga0.88N
Role hole transport layer
7

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role capping layer
8

indium gallium nitride

Type
Formula In0.03Ga0.97N
Role
9

indium gallium nitride

In0.05Ga0.95N
Type
Formula In0.05Ga0.95N
Role
10

indium gallium nitride

Type
Formula In0.07Ga0.93N
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band energy diagram

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

References

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