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AlGaN-based planar deep ultraviolet light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

n-Al0.6GaN

n-AlGaN
Type Complex Compound
Formula
Role n-type semiconductor layer
3

Al0.45GaN/Al0.56GaN multiple quantum well

Al0.45GaN/Al0.56GaN MQW AlGaN MQW
Type Nano Material
Formula
Role active layer
4

p-Al0.6GaN

p-AlGaN
Type Complex Compound
Formula
Role p-type semiconducting layer
5

p-GaN

Type Complex Compound
Formula
Role contacting layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric field intensity distribution dependent on optical polarization mode

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Applications

Area Application Nanomaterial Variant Source
disinfection

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Characterization

Biological effects

Preparation

References

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