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resistive random access memory device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role bottom electrode
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

titanium nitride

Type Single Compound
Formula TiN
Role bottom electrode
4

TaOxNy

Type Complex Compound
Formula
Role dielectric layer
5

oxygen deficient tantalum oxide

tantalum suboxide tantalum oxide TaO2-x TaOx TaOy TaOx
Type
Formula TaO(x)
Role
6

tungsten

Type Single Compound
Formula W
Role top electrode

Properties

General physical and chemical properties

Property Value Source
device resistance state

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Applications

Area Application Source
electronics

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Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

resistive random access memory device

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

resistive random access memory device

References

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