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AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

carbon-doped gallium nitride

Type Complex Compound
Formula
Role buffer layer
3

unintentionally doped gallium nitride

UID GaN
Type
Formula GaN
Role
4

aluminium gallium nitride

aluminum gallium nitride Al0.3Ga0.7N
Type Single Compound
Formula Al0.3Ga0.7N
Role barrier layer
5

silicon nitride

Type
Formula Si3N4
Role
6

nickel/gold stack

Ni/Au stack
Type Complex Compound
Formula
Role gate
7

alumina/hafnia bilayer

Al2O3/HfO2 bilayer
Type Nano Material
Formula
Role gate insulator

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

References

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