Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

InGaAs-based field-effect transistor

Based on

1 Patents
2013 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

amorphous aluminium oxide

amorphous aluminum oxide aluminium(III) oxide amorphous alumina aluminium oxide amorphous Al2O3 aluminum oxide alumina a-Al2O3
Type Single Compound
Formula Al2O3
Role burning oxide layer
3

gallium-indium arsenide

gallium-indium arsenide In0.53Ga0.47As
Type Single Compound
Formula In0.53Ga0.47As
Role semiconductor layer
4

Ni-InGaAs alloy

Type Complex Compound
Formula
Role source/drain
5

amorphous aluminium oxide

amorphous aluminum oxide aluminium(III) oxide amorphous alumina aluminium oxide amorphous Al2O3 aluminum oxide alumina a-Al2O3
Type Single Compound
Formula Al2O3
Role gate dielectrics
6

tantalum

Type Single Compound
Formula Ta
Role gate

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Biological effects

Preparation

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial