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graphene ribbon-based field-effect transistor

Based on

1 Articles
2012 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

polycrystalline graphene ribbons

graphene ribbons
Type
Formula
Role
4

10 nm thick chromium layer

chromium nanolayer chromium layer chromium film Cr layer Cr film
Type
Formula
Role
5

gold source/drain electrode

100 nm thick gold layer 100 nm-thick gold layer gold sacrificial film planar gold film gold electrode gold substrate Au thin film gold coating gold target gold layer gold wafer gold film flat gold Au layer Au film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
channel resistance

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

graphene ribbon-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
Product

graphene ribbon-based field-effect transistor

References

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