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dual-gate bilayer graphene field effect transistor

Based on

8 Articles
2017 Most recent source

Composition

1

doped silicon

doped silicon
Type
Formula
Role
2

SiO2 layer with nanogap

Al2O3 layer
Type
Formula
Role
3

tantalum(III) nitride

doped polysilicon tantalum nitride
Type
Formula TaN
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • p-type low-doped Si
  1. JcJogYf
Product

dual-gate bilayer graphene field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

dual-gate bilayer graphene field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • p-type silicon
  1. G8HX55cMZUiHMQIlBthTmPCxIE1F0
  2. wHyHgClxCsn9wz
Product

dual-gate bilayer graphene field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
Product

dual-gate bilayer graphene field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • aluminium oxide
  • p-type silicon
  1. Awfxqqx9Tb
Product

dual-gate bilayer graphene field effect transistor

Size: not specified

Medium/Support: none

References

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