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Cu/In-Ga-Zn-O/Pt resistive memory

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

platinum

Type Single Compound
Formula Pt
Role electrodes
2

indium-gallium-zinc oxide

In-Ga-Zn-O
Type Complex Compound
Formula
Role resistive switching storage film
3

copper

Type Single Compound
Formula Cu
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on low-resistance state resistance

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • platinum
  • indium-gallium-zinc oxide
Product

Cu/In-Ga-Zn-O/Pt resistive memory

Size: not specified

Medium/Support: none

References

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