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terahertz detector based on InAs nanowire field-effect transistor

Based on

1 Articles
2012 Most recent source

Composition

1

InAs nanowire field-effect transistor

InAs NW FET
Type
Formula
Role
2

silicon

Type
Formula Si
Role

Properties

General physical and chemical properties

Property Value Source
gate capacitance

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

References

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