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light-emitting diode based on zinc oxide nanorods

Based on

1 Articles
2011 Most recent source

Composition

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type
Formula GaN
Role
2

zinc oxide nanorods

ZnO nanorods
Type
Formula
Role
3

Pt layer

Type
Formula
Role
4

30 nm-thick nickel layer

Ni layer Ni film
Type
Formula
Role
5

80 nm-thick gold layer

gold layer gold film Au layer Au films Au film
Type
Formula
Role
6

aluminium layer

aluminium film Al layer Al film
Type
Formula
Role
7

photo-resist

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
bottom contact resistance

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc
  • gallium(III) arsenide
  • oxygen
  1. EdWygGHNGxBQwYRgw
  2. 02y4vgwymxntmryDV3
  3. M8PtV
Product

light-emitting diode based on zinc oxide nanorods

References

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