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nanowire field-effect transistor

Based on

2 Articles
2014 Most recent source

Composition

1

doped silicon

Type
Formula
Role
2

silicon dioxide insulation layer

30 nm thick SiO2 layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2
Type
Formula
Role
3

hafnium oxide film

hafnia thin film HfO2 thin film hafnia film HfO2 layer HfO2 film
Type
Formula
Role
4

InAs nanowires

InAS NW
Type
Formula
Role
5

nickel layer

Ni layer Ni film
Type
Formula
Role
6

gold layer

Type
Formula
Role
7

diammonium sulfide

ammonium sulfide
Type
Formula (NH4)2S
Role
8

12 nm thick Al2O3 layer

Al2O3 layer
Type
Formula
Role
9

tungsten layer

Type
Formula
Role
10

gold layer

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon
  • oxygen
Product

nanowire field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • titanium
  • p-Si/SiO2
Product

nanowire field-effect transistor

Size: not specified

Medium/Support: none

References

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