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PQTBTz-C12/sc-SWNTs-based thin film transistor

Based on

1 Articles
2012 Most recent source

Composition

1

glass

Type
Formula
Role
2

300 nm thick silica layer

300 nm thick SiO2 layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2 film SO2 layer
Type
Formula
Role
3

trichloro(octadecyl)-silane

n-octadecyltrichlorosilane trichloro(octadecyl)silane octadecayltrichlorosilane octadecyl trichlorosilane octadecyltrichlorosilane trichlorooctadecylsilane octadecyltrchlorosilane C18-OTS ODTS OTCS OTS
Type
Formula C18H37Cl3Si
Role
4

PQTBTz-C12/SWNT hybrid film

Type
Formula
Role
5

70 nm thick gold layer

Au electrode gold layers gold film Au layer Au film Au
Type
Formula
Role
6

γ-3-mercaptopropyl triethoxysilane

γ-3-mercaptopropyl triethoxysilane (3-mercaptopropyl)triethoxysilane 3-(mercaptopropyl)triethoxysilane 3-(triethoxysilyl)-1-propanethiol 3-mercaptopropyl triethoxysilane γ-mercaptopropyl triethoxysilane 3-Mercaptopropyltriethoxysilane 3-mercaptopropyltriethoxysilane mercaptopropyltriethoxysilane silane-SH 3-MPTES MPTES MPTS MPMS
Type
Formula C9H22O3SSi
Role

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

PQTBTz-C12/sc-SWNTs-based thin film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

PQTBTz-C12/sc-SWNTs-based thin film transistor

References

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