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silicon nitride ion sensitive field-effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

p-silicon

Type Complex Compound
Formula
Role base
2

aluminium

aluminum
Type Single Compound
Formula Al
Role source
3

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
4

epoxy resin

Type Polymer
Formula
Role isolator
5

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
6

silicon nitride

Type Single Compound
Formula Si3N4
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on pH

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
compounds sensor for H<sup>+</sup>

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Applications

Area Application Nanomaterial Variant Source
medicine/veterinary

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-silicon
Product

silicon nitride ion sensitive field-effect transistor

Size: not specified

Medium/Support: none

References

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