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laterally oriented wrap-gated nanowire field-effect transistor

Based on

1 Articles
2012 Most recent source

Composition

1

doped silicon

Type
Formula
Role
2

silicon dioxide insulation layer

30 nm thick SiO2 layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2
Type
Formula
Role
3

hafnium oxide film

hafnia thin film HfO2 thin film hafnia film HfO2 layer HfO2 film
Type
Formula
Role
4

InAs0.95P0.05 segment

Type
Formula
Role
5

nickel layer

Ni layer Ni film
Type
Formula
Role
6

gold layer

Type
Formula
Role
7

InAs nanowires

InAS NW
Type
Formula
Role
8

12 nm thick Al2O3 layer

Al2O3 layer
Type
Formula
Role
9

tungsten layer

Type
Formula
Role
10

gold layer

Type
Formula
Role
11

diammonium sulfide

ammonium sulfide
Type
Formula (NH4)2S
Role

Properties

General physical and chemical properties

Property Value Source
current on-off ratio

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Applications

Area Application Source
diagnostics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • doped silicon
  • oxygen
Product

laterally oriented wrap-gated nanowire field-effect transistor

References

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