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top-gate field effect transistor with Al-passivated Bi2Se3 thin film

Based on

1 Articles
2012 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

Al passivated Bi2Se3 thin film

Type
Formula
Role
3

Al2O3 layer

Type
Formula
Role
4

10 nm thick titanium layer

10 nm-thick titanium layer titanium layer titanium film Ti electrode Ti layer Ti film
Type
Formula
Role
5

gold thin film

gold film Au layer Au film
Type
Formula
Role

Properties

Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • silicon
  • selenium
  1. gBBz4rwUp6bHpwMQ5c
  2. aOqKnW6nPSmsOTbhQK
  3. LuCYBa6DNSADAJam3l
Product

top-gate field effect transistor with Al-passivated Bi2Se3 thin film

References

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