Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

negative capacitance of ZnGa2Se4/n-Si nano-heterojunction diode

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role substrate
2

ZnGa2Se4 thin film

Type Nano Material
Formula
Role active layer
3

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes

Properties

General physical and chemical properties

Property Value Source
capacitance dependent on frequency

5 more entries available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. oEKXD
Product

negative capacitance of ZnGa2Se4/n-Si nano-heterojunction diode

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial