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GaN-based flip-chip light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

aluminium

aluminum
Type Single Compound
Formula Al
Role substrate
2

zinc oxide nanorod array

ZnO nanorod array zinc oxide array ZnO nanoarray ZnO NR array
Type Nano Material
Formula
Role reflective layer
3

thick Ni/Au film

Type Nano Material
Formula
Role electrodes
4

aluminium-doped zinc oxide

Al-doped ZnO AZO
Type Complex Compound
Formula
Role seed layer
5

thin Ni/Au film

Type Nano Material
Formula
Role current spreading layer
6

magnesium-doped gallium nitride

Mg-doped GaN
Type
Formula
Role
7

Mg-doped Al0.2Ga0.8N

Type
Formula
Role
8

multiple quantum well structure

InGaN/GaN MQW
Type
Formula
Role
9

silicon-doped gallium nitride

Si-doped GaN
Type
Formula
Role
10

Ti/Al/Pt/Au film

Type Nano Material
Formula
Role electrodes
11

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
12

sapphire

Type Single Compound
Formula Al2O3
Role substrate
13

aluminium-doped zinc oxide

Al-doped ZnO AZO
Type Complex Compound
Formula
Role seed layer
14

silicon

Type
Formula Si
Role

Properties

General physical and chemical properties

Property Value Source
electroluminescence spectrum

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Applications

Area Application Source
lighting devices

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • atomic nitrogen
  • gallium
  • sapphire
Product

GaN-based flip-chip light-emitting diode

References

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