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vacuum field emission transistor/metal-oxide-semiconductor field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-type-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-type-doped silicon

Type Complex Compound
Formula
Role cathode
4

silicon nanowire

Type
Formula
Role
5

silicon

Type Single Compound
Formula Si
Role source
6

n-type-doped silicon

Type Complex Compound
Formula
Role drain
7

n-type-doped silicon

Type Complex Compound
Formula
Role anode

Properties

General physical and chemical properties

Property Value Source
anodic current

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon wafer
  1. 1sOguzqJPBA
Product

vacuum field emission transistor/metal-oxide-semiconductor field effect transistor

References

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