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Al/TiOx /TiN memory device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium nitride

Type Single Compound
Formula TiN
Role electrodes
4

oxygen deficient titanium oxide

amorphous titanium(IV) oxide amorphous titanium suboxide amorphous titanium dioxide amorphous titanium oxide amorphous titania titanium suboxide titanium oxide amorphous TiOx a-titania titania a-TiO2 TiO2-x s-TiOx
Type
Formula TiO(x)
Role
5

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
6

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes
7

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes
8

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type
Formula AlO(x)
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Al/TiOx /TiN memory device

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Al/TiOx /TiN memory device

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Al/TiOx /TiN memory device

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Al/TiOx /TiN memory device

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Al/TiOx /TiN memory device

References

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