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Ir/TiOx /TiN memory device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium nitride

Type Single Compound
Formula TiN
Role electrodes
4

oxygen deficient titanium oxide

amorphous titanium(IV) oxide amorphous titanium suboxide amorphous titanium dioxide amorphous titanium oxide amorphous titania titanium suboxide titanium oxide amorphous TiOx a-titania titania a-TiO2 TiO2-x s-TiOx
Type
Formula TiO(x)
Role
5

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
6

tungsten

Type Single Compound
Formula W
Role electrodes
7

tungsten

Type Single Compound
Formula W
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic emission spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Ir/TiOx /TiN memory device

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Ir/TiOx /TiN memory device

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Ir/TiOx /TiN memory device

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Ir/TiOx /TiN memory device

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • air
  • titanium nitride
  • silicon wafer
Product

Ir/TiOx /TiN memory device

Size: not specified

Medium/Support: none

References

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