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deeply depleted channel metal-oxide-semiconductor field-effect transistor

Based on

1 Patents
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

ground plane material

Type Complex Compound
Formula
Role ground plane
2

channel layer material

Type Variant
Formula
Role channel layer
3

high-k dielectric

Type Complex Compound
Formula
Role gate dielectrics

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

References

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