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top-gate ZnO thin-film transistor

Based on

3 Articles
2013 Most recent source

Composition

1

10 nm-thick titanium layer

10 nm-thick titanium layer titanium layer titanium film Ti electrode Ti layer Ti film
Type
Formula
Role
2

200 nm thick gold layer

200 nm-thick gold layer Au thin film gold layer gold film gold
Type
Formula
Role
3

silicon

Type
Formula Si
Role
4

poly (DCDDA-bis-mAPBA)

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon
  • titanium
  • platinum
Product

top-gate ZnO thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  1. QFdEJX8LhLl6
Product

top-gate ZnO thin-film transistor

Size: not specified

Medium/Support: none

References

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