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p-MOSFET/n-MOSFET device

Based on

1 Patents
2014 Most recent source

Composition

1

germanium

Type
Formula Ge
Role
2

indium gallium arsenide

gallium-indium arsenide InGaAs
Type
Formula
Role
3

tantalum(III) nitride

tantalum nitride
Type Single Compound
Formula TaN
Role source
4

tantalum(III) nitride

tantalum nitride
Type Single Compound
Formula TaN
Role drain
5

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role
6

tantalum(III) nitride

tantalum nitride
Type Single Compound
Formula TaN
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-induced barrier lowering

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

References

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