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individual p-type semiconducting CNT-FET

Based on

2 Articles
2013 Most recent source

Composition

1

boron-doped silicon

Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

opened single-walled carbon nanotubes

opened SWCNT
Type
Formula
Role
4

40 nm thick gold layer

gold electrode gold layer gold film Au layer Au film
Type
Formula
Role
5

5 nm thick chromium layer

chromium layer chromium film Cr layer Cr film Cr
Type
Formula
Role
6

poly(methyl methacrylate)

PMMA, A8
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped c-Si
  • aluminium
Product

individual p-type semiconducting CNT-FET

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped c-Si
  • aluminium
Product

individual p-type semiconducting CNT-FET

Size: not specified

Medium/Support: none

References

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