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GaN Schottky photodiode

Based on

1 Articles
2012 Most recent source

Composition

1

heavy doped silicon

Type Complex Compound
Formula
Role conductive substrate
2

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role buffer layer
3

AlN/AlGaN/GaN multilayer structure

Type Nano Material
Formula
Role buffer layer
4

lightly Si-doped n-type GaN

n--GaN
Type Complex Compound
Formula
Role photoactive layer
5

titanium tungsten

Type Single Compound
Formula TiW
Role contacting layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
dark current

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor for UV

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trimethylaluminium
  • heavy doped silicon
  • nitrogen
Product

GaN Schottky photodiode

Size: not specified

Medium/Support: none

References

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