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AlGaN/GaN heterostructure field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

silicon carbide

carborundum
Type
Formula SiC
Role
2

aluminium nitride

aluminum nitride AlN
Type
Formula AlN
Role
3

doped gallium nitride

Type
Formula
Role
4

AlGaN layer

Type
Formula
Role
5

nickel

Type
Formula Ni
Role
6

gold

Type
Formula Au
Role
7

titanium

Type
Formula Ti
Role
8

aluminium

aluminum
Type
Formula Al
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for electron trap dependent on on-state stress/off-state stress

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

References

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