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Si/SnO2 nanowire heterojunction-based light emitting diode

Based on

1 Articles
2011 Most recent source

Composition

1

boron-doped silicon

Type
Formula
Role
2

silica layer

Type
Formula
Role
3

100 nm-thick aluminium layer

100 nm-thick aluminium layer 100-nm thick aluminium layer 100 nm thick alumnium layer Al gate electrode aluminium layer aluminium film aluminium slab aluminum film cathode layer Al thin film Al electrode Al films Al layer Al film Al slab
Type
Formula
Role
4

tin oxide nanowires

SnO2 nanowires
Type
Formula
Role
5

10 nm thick titanium layer

10 nm-thick titanium layer titanium layer titanium film Ti electrode Ti layer Ti film
Type
Formula
Role
6

50 nm-thick gold layer

50 nm-thick gold layer gold plasmonic film gold nanofilms Au nanofilms Au nanofilm gold layer gold film Au layer Au film
Type
Formula
Role
7

5 nm thick gold layer

Au catalyst film gold thin film gold layer gold film Au layer Au film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
conduction band offset

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Applications

Area Application Source
optoelectronics

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Characterization

Biological effects

Preparation

References

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