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AlInGaN-based laser diode

Based on

1 Articles
2013 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role light-emitting diodes
3

n-GaN

Type
Formula
Role
4

n-AlGaN/GaN superlattice

n-AlGaN/GaN SL
Type Nano Material
Formula
Role cladding layer
5

n-GaN

Type Complex Compound
Formula
Role waveguide layer
6

InGaN/InGaN MQW

Type Nano Material
Formula
Role active layer
7

p-AlGaN

Type Complex Compound
Formula
Role hole transport layer
8

p-GaN

Type Complex Compound
Formula
Role waveguide layer
9

Ti/Al

Type Complex Compound
Formula
Role electrodes
10

p-AlGaN/GaN superlattice

p-AlGaN/GaN SL
Type Nano Material
Formula
Role cladding layer
11

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
12

Pd/Pt/Au

Type Complex Compound
Formula
Role electrodes
13

p-GaN

Type Complex Compound
Formula
Role contacting layer

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

References

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