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bottom-gate-type flexible transparent thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

silicon-rich nitride

silicon nitride Si-rich nitride a-SiNx SRN
Type Single Compound
Formula SiN(x)
Role barrier layer
3

aluminium

aluminum
Type Single Compound
Formula Al
Role bottom gate
4

silicon-rich nitride

silicon nitride Si-rich nitride a-SiNx SRN
Type Single Compound
Formula SiN(x)
Role gate insulator layer
5

In2Ga2.3ZnO7.5

Type Single Compound
Formula In2Ga2.3ZnO7.5
Role channel layer
6

aluminium

aluminum
Type Single Compound
Formula Al
Role source
7

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source
effective field-effect mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon-rich nitride
  • poly(ethylene terephthalate)
Product

bottom-gate-type flexible transparent thin-film transistor

References

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