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ZnO field-effect transistor

Based on

28 Articles
2 Patents
2017 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

300 nm thick silica layer

300 nm thick SiO2 layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2 film SO2 layer
Type
Formula
Role
3

single thick zinc oxide nanorods

single thick ZnO nanorods
Type
Formula
Role
4

2 nm thick titanium layer

titanium layer titanium film Ti layer titanium
Type
Formula
Role
5

60 nm-thick gold layer

60 nm-thick gold layer 60 nm thick gold film gold thin film Au thin film gold layer gold film Au layer Au film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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sensors (excluding biosensors)

Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • polycrystalline silicon
  • metal
Product

ZnO field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. RL6JDaZ
Product

ZnO field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

ZnO field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. BWIhTqeWU7tPxkCspDPvknyiWWjfvQZSB8fKoqfVnp1
  2. bXeyJj
  3. nuavFxiIt1T82ryWjlQnb1YmPr90DngLV7Vp
Product

ZnO field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
Product

ZnO field-effect transistor

Size: not specified

Medium/Support: none

References

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