Loading ...

Al/InFe2O4/p-Si diode

Based on

3 Articles
2015 Most recent source

Composition

1

n-Si

Type
Formula
Role
2

CNT-embroidered graphene film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on frequency

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
optoelectronics

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
terahertz time-domain spectroscopy

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. pLWRpvze3zwmEMrS0DT
  2. orTDpeuHlU2nXrYCVdueNHSKG
  3. m9onlc7LiRtzdGVIgqE
Product

Al/InFe2O4/p-Si diode

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

Al/InFe2O4/p-Si diode

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • iron chloride
  • indium(III) acetate
  1. 8n906I695DRs157s2L
  2. d0ICLswZHrMB
Product

Al/InFe2O4/p-Si diode

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial