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Al/InFe2O4/p-Si diode

Based on

3 Articles
2015 Most recent source

Composition

1

n-Si

Type
Formula
Role
2

CNT-embroidered graphene film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on frequency

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
terahertz time-domain spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • iron chloride
  • indium(III) acetate
  1. bjUYRx89XD7ke9OUy2
  2. QLNqaVJ1MlVh
Product

Al/InFe2O4/p-Si diode

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. t4LP0E2CZO3ImBpSH3F
  2. PmpLEs7YUH1NQ1QPSnqzebrIk
  3. UtA6tlMLuLmnwrUy28J
Product

Al/InFe2O4/p-Si diode

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
Product

Al/InFe2O4/p-Si diode

Size: not specified

Medium/Support: none

References

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