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bottom-gate thin film transistor

Based on

1 Articles
2013 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

indium sesquioxide

indium(III) oxide indium trioxide indium oxide
Type Single Compound
Formula In2O3
Role active layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

indium

Type Single Compound
Formula In
Role gate electrode

Properties

General physical and chemical properties

Property Value Source
current on-off ratio

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
  • indium
  1. HxA7
  2. 3Jt04GGklHaDOAOwECp1GB
Product

bottom-gate thin film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
  • indium
  1. QHv5
  2. 1jZlCKBwCqPsyhYL0Q8Dib
Product

bottom-gate thin film transistor

References

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