Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

bottom-gate thin film transistor

Based on

1 Articles
2013 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

indium(III) oxide

Type Single Compound
Formula In2O3
Role active layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

indium

Type Single Compound
Formula In
Role gate electrode

Properties

General physical and chemical properties

Property Value Source
current on-off ratio

More information available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Method Source
scanning electron microscopy

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
  • indium
  1. BFmm
  2. LIz3tLLWcmzABwNJBDTHYX
Product

bottom-gate thin film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
  • indium
  1. Rdzl
  2. 73T197ZicS8bCCnnv06iL8
Product

bottom-gate thin film transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial