Loading ...

high electron mobility transistor

Based on

1 Patents
2013 Most recent source

Composition

1

substrate

Type Variant
Formula
Role substrate
2

buffer

Type Variant
Formula
Role buffer layer
3

gallium nitride

Type Single Compound
Formula GaN
Role channel layer
4

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role spacer
5

indium aluminium nitride

InAlN
Type Complex Compound
Formula
Role barrier layer
6

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role spacer
7

indium aluminium nitride

InAlN
Type Complex Compound
Formula
Role barrier layer

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial