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high electron mobility transistor

Based on

1 Patents
2013 Most recent source

Composition

1

substrate

Type Variant
Formula
Role substrate
2

buffer

Type Variant
Formula
Role buffer layer
3

gallium nitride

Type Single Compound
Formula GaN
Role channel layer
4

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role spacer
5

indium aluminium nitride

InAlN
Type Complex Compound
Formula
Role barrier layer
6

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role spacer
7

indium aluminium nitride

InAlN
Type Complex Compound
Formula
Role barrier layer

Properties

Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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