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InGaN-based light-emitting diode

Based on

1 Articles
2013 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride film

GaN film
Type Nano Material
Formula
Role nucleation layer
3

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
4

n-doped gallium nitride

n-doped GaN
Type
Formula
Role
5

In0.16Ga0.84N quantum wells/gallium nitride film

In0.16Ga0.84N QW/GaN film
Type Nano Material
Formula
Role active region
6

p-doped Al0.15Ga0.85N/In0.03Ga0.97N film

Type
Formula
Role
7

p-doped Al0.15Ga0.85N film

Type Nano Material
Formula
Role hole transport layer
8

p-doped gallium nitride

p-doped GaN
Type Complex Compound
Formula
Role contacting layer

Properties

General physical and chemical properties

Property Value Source
band energy diagram

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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