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indium-tin-oxide ferroelectric-gate thin-film transistor

Based on

1 Articles
2013 Most recent source

Composition

1

strontium dioxido(oxo)titanium

strontium titanium trioxide strontium titanium oxide strontium titanate STO
Type Single Compound
Formula SrTiO3
Role substrate
2

Pt/Ti film

Type Nano Material
Formula
Role bottom gate
3

lead zirconium titanate

PZT
Type Complex Compound
Formula
Role gate insulator
4

lanthanum(III) oxide

lanthanum trioxide lanthanum oxide lanthania
Type Single Compound
Formula La2O3
Role capping layer
5

platinum

Type Single Compound
Formula Pt
Role source electrode
6

platinum

Type Single Compound
Formula Pt
Role drain electrode
7

ITO film

Type Nano Material
Formula
Role conducting layer

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • strontium dioxido(oxo)titanium
Product

indium-tin-oxide ferroelectric-gate thin-film transistor

References

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