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gadolinium oxide-based resistive random access memory with platinum top electrode

Based on

1 Articles
2013 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role isolation layer
3

nanocrystalline tungsten film

tungsten film W thin film W film
Type Nano Material
Formula
Role bottom electrode
4

gadolinium oxide film

GdxOy film
Type Nano Material
Formula
Role resistive switch
5

platinum film

Pt film
Type Nano Material
Formula
Role top electrode

Properties

General physical and chemical properties

Property Value Source
cyclic voltammogram

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Applications

Area Application Source
data storage

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Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • p-type silicon
  1. bkD51Vf
Product

gadolinium oxide-based resistive random access memory with platinum top electrode

References

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